Surface-phosphorus interaction in Si nanocrystals
نویسندگان
چکیده
منابع مشابه
Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers
High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level...
متن کاملPhosphorus Doping in Si Nanocrystals/SiO2 msultilayers and Light Emission with Wavelength compatible for Optical Telecommunication
Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR sp...
متن کاملHyperfine structure of the electron spin resonance of phosphorus-doped Si nanocrystals.
Electronic states of P donors in Si nanocrystals (nc-Si) embedded in insulating glass matrices have been studied by electron spin resonance. Doping of P donors into nc-Si was demonstrated by the observation of optical absorption in the infrared region due to intraconduction band transitions. P hyperfine structure (hfs) was successfully observed at low temperatures. The observed splitting of the...
متن کاملQuantum confinement in phosphorus-doped silicon nanocrystals.
Electronic properties of phosphorus donors in hydrogenated silicon nanocrystals are investigated using a real-space ab initio pseudopotential method for systems with up to 500 atoms. We present calculations for the ionization energy, binding energy, and electron density associated with the doped nanocrystal. We find that the ionization energy for the nanocrystal is virtually independent of size...
متن کاملStructural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices
Thin films of Si nanocrystals (Si NCs) embedded in a silicon carbide (SiC) matrix (Si-NC:SiC) were prepared by alternating deposition of Si-rich silicon carbide (Si1 xCx) and near-stoichiometric SiC mutilayers (Si1 xCx/SiC) using magnetron cosputtering followed by a post-deposition anneal. Transmission electron microscopy and Raman spectroscopy revealed that the Si NCs were clearly established,...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2011
ISSN: 1742-6596
DOI: 10.1088/1742-6596/281/1/012027